科研团队

张韵


张韵,男,博士,研究员,博士生导师。

2005年于清华大学电子科学与技术专业获学士学位,2011年于佐治亚理工学院电子与计算机工程系获博士学位,同年就职于美国高平(Kopin)半导体公司任研发科学家。2012年,入中国科学院半导体研究所工作,入选中组部千人计划青年项目引进人才。现任中国科学院半导体研究所所长助理。2017年获评中科院北京分院启明星优秀人才。担任十二五科技部第三代半导体材料总体专家组成员。

III族氮化物(GaN基材料)等第三代半导体材料及器件物理领域开展了多年研究,获得了首个GaN基射频异质结双极晶体管(HBT)、高灵敏度深紫外雪崩光电二极管(APD)、高亮度深紫外发光二极管(LED)、电注入蓝绿光半导体激光器(LD)、光泵浦深紫外半导体激光器等世界先进的研究成果。发表SCI论文46篇,著作1部。培养出博士生5名,硕士4名,学生中1人次获中科院所长奖学金。

主要研究方向:

1)半导体紫外光源领域:高Al组分AlGaN半导体材料MOCVD生长研究;UVC波段(200-280 nmAlGaN基深紫外激光二极管器件、AlGaN基高效深紫外发光二极管(LED)器件制备及在污染物分解、杀菌消毒等领域的应用研究等。

2)微电子器件领域:AlGaN/GaN基射频/微波高电子迁移率场效应管(HEMT)材料生长及器件制备研究;AlGaN/GaN基增强型(E-modeHEMT材料生长及器件制备研究;InGaN/GaN基射频异质结双极晶体管(HBT)材料生长及器件制备研究。

联系方式:

电话:010-82304283;办公室:1号楼707

E-mailyzhang34@semi.ac.cn

负责/主持项目:

1、国家自然科学基金委面上项目,61874176,氮化镓基高空穴迁移率晶体管材料与器件研究,16万元,2019/01-2019/12,在研,主持

2、国家重点研发计划战略性先进电子材料重点专项项目,2017YFB0402900,用于中等功率通用电源的高效率GaN基电力电子技术,2017/07-2020/122423万元,在研,主持

3、国家重点研发计划战略性先进电子材料重点专项项目课题,2017YFB0402903GaN基电力电子器件可靠性研究与先进封装技术,2017/07-2020/12915万元,在研,主持

4、国家高技术研究发展计划主题项目,2014AA032208高质量第三代半导体材料关键技术课题:高铝组分氮化物材料制备技术研究2014/01-2016/12665万元,已结题,主持

5、北京市重点项目,D161100002516002,深紫外LED材料与芯片自主外延,2016/01-2017/12500万元,已结题,主持

6、国家自然科学基金委面上项目,61376090GaNHBT射频性能提升的研究,2014/01-2017/1285万元,已结题,主持

7、千人计划青年项目,2012/04-2016/12280万元,已结题,主持

8、国家自然科学基金委重点项目,61334009,高效GaN基绿光LED研究,2014/01-2017/12260万元,已结题,参与

9、国家自然科学基金委面上项目,61376047AlGaN基紫外激光二极管研究,2014/01-2017/1286万元,已结题,参与

代表性文章:

1. L. Zhang, Z. Cheng, J. Zeng, H. Lu, L. Jia, Y. Ai, and Y. Zhang, AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact, IEEE Transactions on Electron Devices, 2019, 66(3): 1197-1201.

2. R. Ni, X. Chen, J. Yan, L., Y. Guo, J. Wang, J. Li, and Y. Zhang, Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template, Journal of Alloys and Compounds, 2019,777: 344-349.

3. S. Yang, Y. Ai, Z. Cheng, L. Zhang, L. Jia, B. Dong, B. Zhang, J. Wang, and Y. Zhang, Method of the out-of-band rejection improvement of the AlN based surface acoustic wave filters, Ultrasonics, 2019, 91:30-33.

4. L. Zhao, S. Zhang, Y. Zhang, J. Yan, L. Zhang, Y. Ai, Y. Guo, R. Ni, J. Wang, J. Li, AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices, Superlattices and Microstructures, 2018, 113: 713-719.

5. Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, J. Li, Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening, Applied Physics Letters, 2017, 111: 011102.

6. Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, H. Xie, P. Lu, H. Zhu, J. Wang, J. Li, Sapphire substrate sidewall shaping of deep ultraviolet light-emitting diodes by picosecond laser multiple scribing, Applied Physics Express, 2017, 10: 062101.

7. X. Chen, Y. Zhang, J. Yan, Y. Guo, S. Zhang, J. Wang, J. Li, Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density, Journal of Alloys and Compounds, 2017, 723: 192-196.

8. Y. Tian, J. Yan, Y. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Wang, J. Li, Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells, Nanoscale, 2016, 8: 11012-11018.

9. Y. Tian, Y. Zhang, J. Yan, X. Chen, J. Wang, J. Li, Stimulated emission at 272 nm from an AlxGa1-xN-based multiple-quantum-well laser with two-step etched facets, RSC Advances, 2016, 6: 50245-50249.

10. Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo, P. Cong, L. Sun, Q. Wang, E. Guo, X. Wei, J. Wang, J. Li, Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser, Optics Express, 2015, 23: 11334-11340.

11. P. Dong, J. Yan, Y. Zhang, J. Wang, J. Zeng, C. Geng, P. Cong, L. Sun, T. Wei, L. Zhao, AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency, Journal of Crystal Growth, 2014, 395: 9-13.

12. P. Dong, J. Yan, J. Wang, Y. Zhang, 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates, Applied Physics Letters, 2013, 102: 12.

13. Y. Zhang, Y.-C. Lee, Z. Lochner, H. J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2, physica status solidi (c), 2011, 8(7-8): 2451-2453.

14. Y. Zhang, T.-T. Kao, J. P. Liu, Z. Lochner, Y.-C. Lee, S.-S. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes, Journal of Applied Physics, 2011, 109(8): 083115.

15. Y. Zhang, S.-C. Shen, H. J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and B. Narayan, Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates, Applied Physics Letters, 2009, 94(22): 221109.

16. Y. Zhang, D. Yoo, J. Limb, J. H. Ryou, R. D. Dupuis, and S.-C. Shen, GaN ultraviolet avalanche photodiode fabricated on free-standing bulk GaN substrates, physica status solidi (c), 2008, 5(6): 2290-2292.

17. S.-C. Shen, Y. Zhang, D. Yoo, J.-B. Limb, J.-H. Ryou, P. D. Yoder, and R. D. Dupuis, Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD, IEEE Photonics Technology Letters, 2007, 19(21): 1744-1746.

18.《中国新材料热点领域产业发展战略》,任红轩 刘华强 张韵 于灏 主编,科学技术文献出版社, 20155月出版